Semiconductor Electronics
Course: Computer Systems and Networks Engineering
Structural unit: Faculty of Radiophysics, Electronics and Computer Systems
Title
Semiconductor Electronics
Code
ВБС 1.2
Module type
Вибіркова дисципліна для ОП
Educational cycle
First
Year of study when the component is delivered
2023/2024
Semester/trimester when the component is delivered
4 Semester
Number of ECTS credits allocated
5
Learning outcomes
The student must know: Physical models of basic elements of semiconductor devices. Equivalent circuits and electro physical characteristics of basic elements of semiconductor devices. The main types of semiconductor structures. The main physical properties of dielectrics, semiconductors, metals. Methods of manufacturing and application of simple semiconductor devices.
Form of study
Full-time form
Prerequisites and co-requisites
The discipline "Semiconductor Electronics" is based on the cycle of disciplines of professional and practical training, in particular, "Physics," "Differential equations," "Mathematical analysis."
Course content
Basics of the general theory of semiconductors. Crystal structure of semiconductors. Crystal lattices, Brave grating, Brave lattice classification and crystal structures, straight and inverse crystal lattices. Electron physics in periodic potential. Basics of zone theory of semiconductors. Oscillation of atoms in the crystal lattice, phonons. Defects in real crystals. Electron statistics in semiconductors. Chemical bonding and basic patterns in bonds. Methods for measuring the specific resistance of semiconductor materials. Physical processes in semiconductors (Hall effect, thermomagnetic and thermoelectric effects, diffusion and drift of charge carriers, Shottky barrier, p-n-transition, field effect, MDP structure, heterostructure). Classification, construction, principles of operation, basic parameters and characteristics of semiconductor devices (diodes, transistors, thyristors, semistors).
Recommended or required reading and other learning resources/tools
1. Shengkai Wang, Xiaolei Wang. MOS Interface Physics, Process and Characterization. 2021.-174p.
2. D. Nirmal, J. Ajayan, et al. Semiconductor Devices and Technologies for Future Ultra Low Power Electronics. 2021.-302p.
3. Emil Zolotoyabko. Introduction to Solid State Physics for Materials Engineers.-2021.- 304p.
4. О.В. Третяк, В.З. Лозовський. Основи фізики напівпровідників.В 2 т. - К.: ВПЦ «Київський університет», 2007.
5. В.З.Лозовський, К.В.Покидько, Г.М.Стрільчук. Практикум з фізики напівпровідників. Ч.1, 2. Київ. КНУ. 2009. – 71с.
Planned learning activities and teaching methods
Lectures, laboratory work, individual independent work.
Assessment methods and criteria
- Semester evaluation: The academic semester has three content modules: content module 1 (ЗМ1) includes topics 1-7, content module 2 (ЗМ2) includes topics 8-12, content module 3 (ЗМ3) includes themes 13-17.
- final evaluation (in the form of an exam): exam form - written and oral. The examination ticket consists of 2 questions; each question is rated from 0 to 20 points. In total, you can get from 0 to 40 points for the exam. The condition for achieving a positive assessment for the discipline is to receive at least 60 points, while the score for the results of training 2 [skill] and 4 [autonomy and responsibility] cannot be less than 50% of the maximum level (15 and 5 points respectively), the score for the exam cannot be less than 24 points. - conditions of admission to the exam: the condition for admission to the exam is the student's receipt in total not less than the critical calculation minimum of 36 points for the semester, and the delivery of all laboratory works.
Language of instruction
Ukrainian
Lecturers
This discipline is taught by the following teachers
Leonid
Dekhtyaruk
Department of Radiotechnique and radioelectronics systems
Faculty of Radiophysics, Electronics and Computer Systems
Faculty of Radiophysics, Electronics and Computer Systems
Departments
The following departments are involved in teaching the above discipline
Department of Radiotechnique and radioelectronics systems
Faculty of Radiophysics, Electronics and Computer Systems