Semiconductor Electronics
Course: Computer Systems and Networks Engineering
Structural unit: Faculty of Radiophysics, Electronics and Computer Systems
            Title
        
        
            Semiconductor Electronics
        
    
            Code
        
        
            ВБС 1.2
        
    
            Module type 
        
        
            Вибіркова дисципліна для ОП
        
    
            Educational cycle
        
        
            First
        
    
            Year of study when the component is delivered
        
        
            2023/2024
        
    
            Semester/trimester when the component is delivered
        
        
            4 Semester
        
    
            Number of ECTS credits allocated
        
        
            5
        
    
            Learning outcomes
        
        
            The student must know: Physical models of basic elements of semiconductor devices. Equivalent circuits and electro physical characteristics of basic elements of semiconductor devices. The main types of semiconductor structures. The main physical properties of dielectrics, semiconductors, metals. Methods of manufacturing and application of simple semiconductor devices.
        
    
            Form of study
        
        
            Full-time form
        
    
            Prerequisites and co-requisites
        
        
            The discipline "Semiconductor Electronics" is based on the cycle of disciplines of professional and practical training, in particular, "Physics," "Differential equations," "Mathematical analysis."
        
    
            Course content
        
        
            Basics of the general theory of semiconductors. Crystal structure of semiconductors. Crystal lattices, Brave grating, Brave lattice classification and crystal structures, straight and inverse crystal lattices. Electron physics in periodic potential. Basics of zone theory of semiconductors. Oscillation of atoms in the crystal lattice, phonons. Defects in real crystals. Electron statistics in semiconductors. Chemical bonding and basic patterns in bonds. Methods for measuring the specific resistance of semiconductor materials. Physical processes in semiconductors (Hall effect, thermomagnetic and thermoelectric effects, diffusion and drift of charge carriers, Shottky barrier, p-n-transition, field effect, MDP structure, heterostructure). Classification, construction, principles of operation, basic parameters and characteristics of semiconductor devices (diodes, transistors, thyristors, semistors).
        
    
            Recommended or required reading and other learning resources/tools
        
        
            1. Shengkai Wang, Xiaolei Wang. MOS Interface Physics, Process and Characterization. 2021.-174p. 
2. D. Nirmal, J. Ajayan, et al. Semiconductor Devices and Technologies for Future Ultra Low Power Electronics. 2021.-302p. 
3. Emil Zolotoyabko. Introduction to Solid State Physics for Materials Engineers.-2021.- 304p. 
4. О.В. Третяк, В.З. Лозовський. Основи фізики напівпровідників.В 2 т. -  К.: ВПЦ «Київський університет», 2007. 
5. В.З.Лозовський, К.В.Покидько, Г.М.Стрільчук. Практикум з фізики напівпровідників. Ч.1, 2. Київ. КНУ. 2009. – 71с. 
        
    
            Planned learning activities and teaching methods
        
        
            Lectures, laboratory work, individual independent work.
        
    
            Assessment methods and criteria
        
        
            - Semester evaluation: The academic semester has three content modules: content module 1 (ЗМ1) includes topics 1-7, content module 2 (ЗМ2) includes topics 8-12, content module 3 (ЗМ3) includes themes 13-17.
- final evaluation (in the form of an exam): exam form - written and oral. The examination ticket consists of 2 questions; each question is rated from 0 to 20 points. In total, you can get from 0 to 40 points for the exam. The condition for achieving a positive assessment for the discipline is to receive at least 60 points, while the score for the results of training 2 [skill] and 4 [autonomy and responsibility] cannot be less than 50% of the maximum level (15 and 5 points respectively), the score for the exam cannot be less than 24 points. - conditions of admission to the exam: the condition for admission to the exam is the student's receipt in total not less than the critical calculation minimum of 36 points for the semester, and the delivery of all laboratory works.
        
    
            Language of instruction
        
        
            Ukrainian
        
    Lecturers
This discipline is taught by the following teachers
                    Leonid
                    
                    Dekhtyaruk
                
                
                    Department of Radiotechnique and radioelectronics systems 
Faculty of Radiophysics, Electronics and Computer Systems
            Faculty of Radiophysics, Electronics and Computer Systems
Departments
The following departments are involved in teaching the above discipline
                        Department of Radiotechnique and radioelectronics systems
                    
                    
                        Faculty of Radiophysics, Electronics and Computer Systems