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Computer experiment in micro- and nano-electronics

ВК 1.3

Вибіркова дисципліна для ОП

First

2023/2024

6 Semester

3

General basics of semiconductor physics and nanoscale electron devices. Basic approaches to calculation of electron, optical, magnetic and other physical parameters of semiconductors. Basic physical processes taking place while electric current is flowing through semiconductors. Influence of defects and other inhomogenities of semiconductor structure on the process of charge carriers’ transport. Major algorithms for simulation of processes of current flow and heat generation in semiconductors.

Knowledge: major laws and equations of the courses of general physics, solid state physics, higher mathematics, basics of the theory of approximations in solving physical problems, basics of building computer algorithms. Ability: building practically applicable physical models of the real systems, identifying major and secondary factors, which determine temporal behaviour and physical properties of the physical systems, formulating physical models in terms of deifferential and algebraic equations.

Major physical parameters of semiconductor materials. Semiclassical theory of the charge carrier transport. Numerical algorithms for calculation of charge carriers’ mobility in semiconductors. Drift-diffusion equation and its numerical solutions. Simulation of thermal effects in nanoscale electron devices. Quantum correction to semiclassical models of the basic elements of nanoelectronics. Green functions method of numerically solving the equations of the charge carrier transport.

1. E.A. Gutierrez-D. Nano-Scaled Semiconductor Devices - Physics, Modelling, Characterisation and Societal Impact. – The Institution of Engineering and Technology, 2016. – 453 pp. 2. I.S. Amiri, H. Mohammadi, M. Hosseinghadiry. Device Physics, Modelling, Technology, and Analysis for Silicon MESFET. – Springer Nature Switzerland AG, 2019. – 122 pp. 3. W. Lambrechts, S. Sinha, J. Abdallah, J. Prinsloo. Extending Moore’s Law through Advanced Semiconductor Design and Processing Techniques. – Taylor & Francis Group, LLC, 2019. – 354 pp.

Oral lectures using computer equipment for data visualization (28 hours). Consultations in the classroom or using means of distant learning (2 hours). Self-study using the materials in the electronic form provided by the instructor (28 hours).

Semester evaluation is performed by means of two written tests. A student can earn a maximum of 30 points for each of these tests. The final evaluation at the end of semester is performed by means of the combined written/oral test, which can give a maximum of 40 points. The course is passed with a positive grade if the total number of points obtained from all evaluations is no less than 60.

Ukrainian