Semiconductor electronics of nanostructures
Course: Applied physics, nanoelectronics and computer technology
Structural unit: Faculty of Radiophysics, Electronics and Computer Systems
Title
Semiconductor electronics of nanostructures
Code
ВБ 2.11
Module type
Вибіркова дисципліна для ОП
Educational cycle
First
Year of study when the component is delivered
2023/2024
Semester/trimester when the component is delivered
8 Semester
Number of ECTS credits allocated
3
Learning outcomes
Basic circuitry of integrated nanoelectronics. Basic physical processes taking place while elctric current is flowing through nanoscale transistors. Physical basis of manufacturing technology for production of modern and persepctive nanoelectronic circuits. Basic transient processesin electric circuits of memory cells and logic gates as part of nanoscale integrated devices. Major physical features characteristic of a transition of integrated circuits from micro- to nano-scale.
Form of study
Prerequisites and co-requisites
Knowledge: major laws, equations and relations of general physics, solid state physics, quantum mechanics, theory of electric circuits and transient processes in them, models of their active and passive building blocks. Ability: building simplest linear physical models, reading, understanding and design of electric circuits, solving the simplest differential equations and eigenvalue problems, constructing a hamiltonian of a particle in any given potential.
Course content
Nanosized p-n junction, ist structure and major properties. Basic transport mechanisms of electric charges. Basic notions of the modern manufacturing technologies for nanoscale integrated circuits. Nanoscale metal-insulator-semiconductor stack, accumulation, deplition and inversion regimes. Review of manufacturing technology for the nanoscale MIS stacks. Field effect transistor as a major building block of modern integrated nanoelectronics. Scaling of field effect transitors and other elements.
Recommended or required reading and other learning resources/tools
1. B.K. Kaushik. Nanoscale Devices – Physics, Modeling, and Their Application. – Taylor & Francis Group, LLC, 2019. – 432 pp.
2. L.H. Madkour. Nanoelectronic Materials – Fundamentals and Applications. Springer Nature Switzerland AG, 2019. – 783 pp.
3. M.M. Hussain. Advanced Nanoelectronics – Post-Silicon Materials and Devices. Wiley-VCH Verlag GmbH & Co, 2019. – 272 pp.
Planned learning activities and teaching methods
Oral lectures using computer equipment for data processing and visualization (29 hours). Consultations in the classroom or using means of distant learning (2 hours). Self-study using the materials in the electronic form provided by the instructor (22 hours).
Assessment methods and criteria
Semester evaluation is performed by means of two written tests. A student can earn a maximum of 30 points for each of these tests. The final evaluation at the end of semester is performed by means of the combined written/oral test, which can give a maximum of 40 points. The course is passed with a positive grade if the total number of points obtained from all evaluations is no less than 60.
Language of instruction
Ukrainian
Lecturers
This discipline is taught by the following teachers
Andrii
Mykolajovych
Goriachko
Department of Quantum Radio Physics and Nanoelectronics
Faculty of Radiophysics, Electronics and Computer Systems
Faculty of Radiophysics, Electronics and Computer Systems
Departments
The following departments are involved in teaching the above discipline
Department of Quantum Radio Physics and Nanoelectronics
Faculty of Radiophysics, Electronics and Computer Systems