Nanostructured silicon: properties and applications
Course: Physics of nanosystems
Structural unit: Faculty of Physics
Title
Nanostructured silicon: properties and applications
Code
ОК 21
Module type
Обов’язкова дисципліна для ОП
Educational cycle
Second
Year of study when the component is delivered
2023/2024
Semester/trimester when the component is delivered
4 Semester
Number of ECTS credits allocated
3
Learning outcomes
Know the structural and physical properties of various forms of nanostructured silicon, methods of synthesis and areas of its application.
Be able to use modern experimental research methods and theoretical methods of description of the physical properties of nanomaterials.
Form of study
Full-time form
Prerequisites and co-requisites
Successfully master the courses of general physics.
Know the theoretical foundations taught in the courses of quantum mechanics, solid state physics and quantum theory of solids.
Master the material from special courses on physics and diagnostics of nanosystems.
Course content
The course "Nanostructured Silicon: Properties and applications" examines the main types of nanostructured silicon, the relationship between the structure and properties of nanosilicon, studies the main areas of use of this material. The purpose of studying the discipline is to familiarize the student with the physico-chemical bases of nanostructured silicon synthesis, methods of its analysis, properties of the material with different structure and features of its use in devices for different purposes.
The results of the training are the ability to determine the basic structural characteristics of nanostructured silicon and the physical causes of changes in the properties of silicon due to the transition from monocrystalline to nanostructured form. Teaching methods: lectures, independent work. Assessment methods: modular test work, surveys during lectures, test.
Recommended or required reading and other learning resources/tools
1. Shevchenko V.B. Porous silicon: synthesis, properties, application. Vinnytsia: LLC "Nilan-LTD", 2019. – 132 p.
2. Isaiev M.V., Shevchenko V.B., Voitenko K.V. Synthesis and research methods of porous silicon. Vinnytsia: LLC "Nilan-LTD", 2017. – 128 p.
3. Korotcenkov G. Porous Silicon: From Formation to Application, Vol. 1. – Taylor and Francis Group, CRC Press, Boca Raton, USA, 2015. – 432 p.
4. Dyadenchuk A.F., Kidalov V.V. Formation of porous semiconductors by electrochemical etching: Monograph.– Berdyansk: BSPU Publisher, 2017. – 111 p.
5. Sailor M. J. Porous Silicon in Practice: Preparation, Characterization and Applications. –Wiley-VCH, 2011. – 262 р.
Planned learning activities and teaching methods
Lectures - 30 hours.
Self-study - 60 hours.
Assessment methods and criteria
Semester assessment: (max / min)
1. Modular test 1 on topics 1-7: PH 1.1 - 25 points / 15 points
2. Modular test 2 on topics 8-15: PH 1.1 - 25 points / 15 points
3. Surveys during lectures: PH 1.1, 1.2 - 10 points / 6 points
Surveys during lectures, modular tests.
A student is not allowed to take the final test if he / she scored less than 36 points during the semester. The grade for the final test cannot be less than 24 points for it to be an overall positive grade for the course.
Language of instruction
Ukrainian
Lecturers
This discipline is taught by the following teachers
Viktoriya
Bogdanivna
Shevchenko
Department of Metals Physics
Faculty of Physics
Faculty of Physics
Departments
The following departments are involved in teaching the above discipline
Department of Metals Physics
Faculty of Physics