Semiconductor electronics of nanostructures
Course: Applied physics, nanoelectronics and computer technology
Structural unit: Faculty of Radiophysics, Electronics and Computer Systems
            Title
        
        
            Semiconductor electronics of nanostructures
        
    
            Code
        
        
            ВБ 2.11
        
    
            Module type 
        
        
            Вибіркова дисципліна для ОП
        
    
            Educational cycle
        
        
            First
        
    
            Year of study when the component is delivered
        
        
            2022/2023
        
    
            Semester/trimester when the component is delivered
        
        
            8 Semester
        
    
            Number of ECTS credits allocated
        
        
            3
        
    
            Learning outcomes
        
        
            Basic circuitry of integrated nanoelectronics. Basic physical processes taking place while elctric current is flowing through nanoscale transistors. Physical basis of manufacturing technology for production of modern and persepctive nanoelectronic circuits. Basic transient processesin electric circuits of memory cells and logic gates as part of nanoscale integrated devices. Major physical features characteristic of a transition of integrated circuits from micro- to nano-scale.
        
    
            Form of study
        
        
            Prerequisites and co-requisites
        
        
            Knowledge: major laws, equations and relations of general physics, solid state physics, quantum mechanics, theory of electric circuits and transient processes in them, models of their active and passive building blocks. Ability: building simplest linear physical models, reading, understanding and design of electric circuits, solving the simplest differential equations and eigenvalue problems, constructing a hamiltonian of a particle in any given potential.
        
    
            Course content
        
        
            Nanosized p-n junction, ist structure and major properties. Basic transport mechanisms of electric charges. Basic notions of the modern manufacturing technologies for nanoscale integrated circuits. Nanoscale metal-insulator-semiconductor stack, accumulation, deplition and inversion regimes. Review of manufacturing technology for the nanoscale MIS stacks. Field effect transistor as a major building block of modern integrated nanoelectronics. Scaling of field effect transitors and other elements.
        
    
            Recommended or required reading and other learning resources/tools
        
        
            1. B.K. Kaushik. Nanoscale Devices – Physics, Modeling, and Their Application. – Taylor & Francis Group, LLC, 2019. – 432 pp.
2. L.H. Madkour. Nanoelectronic Materials – Fundamentals and Applications. Springer Nature Switzerland AG, 2019. – 783 pp.
3. M.M. Hussain. Advanced Nanoelectronics – Post-Silicon Materials and Devices. Wiley-VCH Verlag GmbH & Co, 2019. – 272 pp.
        
    
            Planned learning activities and teaching methods
        
        
            Oral lectures using computer equipment for data processing and visualization (29 hours). Consultations in the classroom or using means of distant learning (2 hours). Self-study using the materials in the electronic form provided by the instructor (22 hours).
        
    
            Assessment methods and criteria
        
        
            Semester evaluation is performed by means of two written tests. A student can earn a maximum of 30 points for each of these tests. The final evaluation at the end of semester is performed by means of the combined written/oral test, which can give a maximum of 40 points. The course is passed with a positive grade if the total number of points obtained from all evaluations is no less than 60. 
        
    
            Language of instruction
        
        
            Ukrainian
        
    Lecturers
This discipline is taught by the following teachers
                    Andrii 
                    Mykolajovych 
                    Goriachko 
                
                
                    Department of Quantum Radio Physics and Nanoelectronics 
Faculty of Radiophysics, Electronics and Computer Systems
            Faculty of Radiophysics, Electronics and Computer Systems
Departments
The following departments are involved in teaching the above discipline
                        Department of Quantum Radio Physics and Nanoelectronics
                    
                    
                        Faculty of Radiophysics, Electronics and Computer Systems